Topological Signatures of Medium Range Order in Amorphous Semiconductor Models
نویسندگان
چکیده
منابع مشابه
Medium Range Structure of Hydrogenated Amorphous Ti84Si16
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
متن کاملObservation of intermediate-range order in a nominally amorphous molecular semiconductor film
Due to a high demand for better, more efficient, and less expensive displays and lighting, the science and engineering community has concentrated efforts on the development, understanding and optimization of new electroluminescent materials. Consequently, organic light emitting devices (OLEDs) have gained interest as an alternative to inorganic semiconductor technology. Not surprisingly, device...
متن کاملElectronic signatures of topological disorder in amorphous graphene
There have been extensive studies of the many phases of carbon, involving diamond and graphite, fullerenes, carbon nanotubes, amorphous carbon [1–3] and Schwarzites. In this study, the authors explore the impact of topological disorder (oddmembered rings) on the electron localisation of amorphous graphene. The authors employ realistic structural models, and find that the electronic states aroun...
متن کاملMeasurement and Modeling of Short and Medium Range Order in Amorphous Ta2O5 Thin Films
Amorphous films and coatings are rapidly growing in importance. Yet, there is a dearth of high-quality structural data on sub-micron films. Not understanding how these materials assemble at atomic scale limits fundamental insights needed to improve their performance. Here, we use grazing-incidence x-ray total scattering measurements to examine the atomic structure of the top 50-100 nm of Ta2O5 ...
متن کاملShort-range order of compressed amorphous GeSe2
The structure of amorphous GeSe2 (a-GeSe2) has been studied by means of a combination of two-edges X-ray absorption spectroscopy (XAS) and angle-dispersive X-ray diffraction under pressures up to about 30 GPa. Multiple-edge XAS data-analysis of a-GeSe2 at ambient conditions allowed us to reconstruct and compare the first-neighbor distribution function with previous results obtained by neutron d...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2000
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-609-a2.5